Schottky gate field-effect semiconductor device,申请号EP19890122454-传众专利搜索

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发明名称	Schottky gate field-effect semiconductor device
摘要
申请公布号	EP0377126(B1)	申请公布日期	1996.04.10
申请号	EP19890122454	申请日期	1989.12.06
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	SHIMADA, KIZASHI;AKIYAMA, TATSUO;KOSHINO, YUTAKA
分类号	H01L21/338;H01L21/28;H01L29/417;H01L29/43;H01L29/47;H01L29/812;(IPC1-7):H01L29/47	主分类号	H01L21/338
代理机构		代理人
主权项
地址

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