发明名称 Method of fabricating a semiconductor device of thin package type
摘要 A method of fabrication of a semiconductor device comprises forming a conductive pattern comprising lead elements having first ends (15) positioned near a mount region for a semiconductor element and having second ends (18) connected in a branch area to a common lead element extending through a bridging region which will later be removed (20). A protective film is formed to cover the conductive pattern using the common lead element as a plating lead. The conductive pattern in the branch area is removed (20) to isolate the individual lead elements from each other. A semiconductor element (21) is mounted on the mount region. The first ends of the leads (15) and pads (21) on the semiconductor element are connected by means of conductors (22). Then, the branch area, the semiconductor element and the conductors are sealed (23). <IMAGE>
申请公布号 EP0438742(B1) 申请公布日期 1996.04.10
申请号 EP19900124878 申请日期 1990.12.20
申请人 OKI ELECTRIC INDUSTRY COMPANY, LIMITED 发明人 YAMAGUCHI, TADASHI
分类号 B42D15/10;G06K19/077;H01L21/48;H01L21/56;H01L23/28;H01L23/31;H01L23/498;H05K1/00;H05K3/00;H05K3/24 主分类号 B42D15/10
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