| 摘要 |
FIELD: semiconductor devices. SUBSTANCE: hall gate is designed as structure, which is made from semiconductor substrate having first conductance type and containing diffusion area of second conductance type, inside which semiconductor mesa-area, which is embraced by electric insulation, is located. Gate electrode on thin under-gate dielectric, two current areas and two areas of Hall contacts are located inside mesa-area. In addition, Hall and current contacts, high-resistance area having second type of conductance, side electric insulation, which embraces contact areas to diffusion areas of Hall and current contacts, are in symmetry about gate electrode and, correspondingly, with respect to each other. This results in possibility to decrease rest tension in Hall gate caused by loss of symmetry of current and Hall contacts about one another and in adjacent areas due to mismatch of topological layers when active areas of metal-dielectric-semiconductor areas are generated. EFFECT: possibility to measure magnetic fields in magnetic- controlled circuits for electronic automation or to be used as sensitive element in integral magnetic-controlled circuits. 3 dwg |
