| 摘要 |
<p>A method of and apparatus for improving the accessing capability of asynchronous and synchronous dynamic random access memory devices by a novel interfacing and accessing procedure in which the same pins are used for each of row, column and data accessing and in both the write and read cycles; such enabling effective increasing of the data bandwidth and addressing range in substantially the same size packages and pin counts of current DRAMs, or providing equivalent performance in smaller packages with fewer pins. This enables reducing the number of required components for the same configuration, providing compatable density in smaller packages, and with lower power consumption and finer granularity and pin compatability for a wide range of current DRAMs.</p> |
