发明名称 |
Integrated circuit subsurface zener diode |
摘要 |
A zener diode is incorporated into a conventional integrated circuit without changing the process. The structure employed produces a diode that breaks down in a subsurface region, thus avoiding the noise and instabilities that attend surface breakdown. An isolation diffusion is employed to make the anode and an NPN transistor emitter diffusion is employed to provide the cathode. If the emitter diffusion diameter is larger than the oxide cut used to achieve isolation predeposition and is concentric therewith, the resulting zener diode will have its breakdown region confined to under the emitter diffusion. The diode action is thereby remote from surface junction breakdown effects.
|
申请公布号 |
US4127859(A) |
申请公布日期 |
1978.11.28 |
申请号 |
US19770772375 |
申请日期 |
1977.02.25 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
NELSON, CARL T. |
分类号 |
H01L21/761;H01L29/866;(IPC1-7):H01L29/90 |
主分类号 |
H01L21/761 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|