| 摘要 |
The photodetector determines the wavelength of infrared light by adjusting surface density of an active layer(2) which is formed on a semiconductor substrate(1). Several delta-doped layers(2a-2b) are formed inside the active layer. A current pouring layer(3) is formed above the active layer and a cap layer(4) is arranged above the current pouring layer. An electrode(5) is formed on the cap layer. The photodetector performs good optical detection at normal temp. |
