Epitaxial growth method of semiconductor crystal and molecular beam epitaxy apparatus for the same

摘要

In an epitaxial growth of a group III-V compound semiconductor crystal, there is provided a substrate on which group III element halide molecules are adsorbed. A beam of group V element hydride molecules is supplied toward the substrate for reaction of the group V element hydride and the group III element halide. The vibration energy of each of group V element hydride molecules is excited in the beam and the orientation of the group V element hydride molecules is aligned. As a result, the supplied group V atom directly combines with the group III atom.