| 发明名称 |
SILICON THIN FILM MEMBRANE |
| 摘要 |
<p>A silicon thin film member according to the present invention comprises a supporting substrate and an a-Si thin film formed by plasma CVD and including hydrogen. The a-Si thin film has a distribution of hydrogen density in which a hydrogen content of the a-Si thin film has a maximum value of 1x1022 atoms/cm3 or more in a position 20 nm or less away from an interface between the a-Si thin film and the supporting substrate, and the maximum value of the hydrogen content is larger than a hydrogen content of the supporting substrate on the interface. The hydrogen content of the a-Si thin film decreases from the position toward the interface and decreases from the position in a direction from the supporting substrate to the a-Si thin film.</p> |
| 申请公布号 |
KR960004593(B1) |
申请公布日期 |
1996.04.09 |
| 申请号 |
KR19920010537 |
申请日期 |
1992.06.18 |
| 申请人 |
TOSHIBA K.K. |
发明人 |
IHARA, HISANORI;NOJAKI, HIDETOSHI |
| 分类号 |
C04B41/50;C04B41/85;C23C16/22;C23C16/24;C23C16/505;H01L21/205;H01L21/331;H01L21/336;H01L29/78;H01L29/786;H01L29/861;H01L31/04;H01L31/20;(IPC1-7):H01L21/205 |
主分类号 |
C04B41/50 |
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