发明名称 METHOD OF GROWING SINGLE CRYSTAL OF BETA-BARIUM BORATE
摘要 PURPOSE: To enable the growth of barium borate(BBO) long single crystal of high quality without grain boundary and inclusion by the pulling-up process using a seed crystal having the upward phase-matching direction. CONSTITUTION: In the growth of BBO single crystal by the pulling-up process using a seed crystal 1 which is processed so that it has the phase-matching direction inclined byθfrom the axis (c), the single crystal is grown without drastic fluctuation of heat-flow conditions at the growing boundary face, as the interval of the crystal habit 2 is kept at a certain period, by allowing the temperature of the melt to fall down at a constant rate regardless of the diameter fluctuation of the crystal grown since before the crystal habit occurs, after the seed crystal is allowed to contact with the melt.
申请公布号 JPH0891996(A) 申请公布日期 1996.04.09
申请号 JP19940224357 申请日期 1994.09.20
申请人 NEC CORP 发明人 KOUDA HIKARI
分类号 C30B15/36;C30B29/22;(IPC1-7):C30B29/22 主分类号 C30B15/36
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