| 摘要 |
The photodiode is prepared by (A) forming a lower electrode(11) with metal on a glass substrate, (B) depositing a silicon of photoelectric conversion layer, (C) forming a SiNx layer(13) on the silicon surface, (D) depositing an upper transparent electrode(14) on the SiNx layer(13) and (E) patterning the deposited electrode. The SiNx layer(13) is grown to the thickness of 80-110 angstrom in N2 atmosphere with more than 100W RF power and 200-250 deg.C plasma.
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