发明名称 |
Method of making a high resistance drain junction resistor in a SRAM |
摘要 |
An improved SRAM resistor structure having implanted therein ions of an material in the surface layer of a drain junction region juxtaposed to an overlying metal contact layer providing the benefits of high resistance, low energy consumption, a single ion implantation step in an easily controlled process while producing a precise resistance desired and a method of making the SRAM resistor structure.
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申请公布号 |
US5506167(A) |
申请公布日期 |
1996.04.09 |
申请号 |
US19950421000 |
申请日期 |
1995.04.13 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN, HWI-HUANG;HONG, GARY |
分类号 |
H01L27/11;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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