| 摘要 |
<p>A radio-frequency power amplifier (22) includes a multiple-FET chip (26) that is flip mounted on a connection region (32) of a substrate (30). An input impedance-matching network (62, 64) is also mounted on the substrate. The network includes a coplanar waveguide (24) having an elongate waveguide signal conductor (48b, 48c) for each gate terminal (70) on the FET chip (26) with a distal end (48d, 48c) spaced from the connection region (32) and a proximal end (48g, 48h) in the connection region. A capacitor (54, 56) couples each of the input signal conductor distal ends (48d, 48c) to an adjacent ground conductor (36, 38). The signal conductors (48b, 48c) and capacitors (54, 56) provide a selected impedance at a selected frequency. An output coplanar waveguide (28) includes, for each drain terminal (72) an output signal conductor (88) having an end (82a) in the connection region (32) that is electrically connected to the flip mounted FET chip (26). This waveguide (28) also has a length selected to provide desired impedance matching and may also have other means of impedance matching.</p> |
