发明名称 |
FIXED VALUE STORAGE CELL ARRANGEMENT AND METHOD OF PRODUCING THE SAME |
摘要 |
The invention concerns a fixed value storage cell arrangement comprising, in a substrate (21) of semiconductor material, storage cells each having a vertical MOS transistor. The various logical values (zero, one) are brought about by gate dielectrics (27, 28) of different thicknesses. The storage cell arrangement can be produced in particular in a silicon substrate using few process steps and a high packing density. The storage cell arrangement and a readout control circuit can thus be produced integrally. |
申请公布号 |
WO9610266(A1) |
申请公布日期 |
1996.04.04 |
申请号 |
WO1995DE01262 |
申请日期 |
1995.09.14 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;KRAUTSCHNEIDER, WOLFGANG;RISCH, LOTHAR;HOFMANN, FRANZ;ROESNER, WOLFGANG |
发明人 |
KRAUTSCHNEIDER, WOLFGANG;RISCH, LOTHAR;HOFMANN, FRANZ;ROESNER, WOLFGANG |
分类号 |
H01L21/8247;H01L21/8246;H01L27/112;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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