摘要 |
<p>A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material (14) on a substrate (12) in a vaccum vessel (10) locating an impurity (16) atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.</p> |