Lateral field effect transistor with thick oxide layer LOCOS

摘要

The lateral Field Effect Transistor (FET) consists of a semiconductor layer (41) of P or N type, a trench region (42) of P type formed by implantation and diffusion of dopant ions, a source region (45) of N type formed by implantation and diffusion on the surface of the trench. An offset-region (47) of N type is similarly formed to the side of the source zone, a LOCOS oxide film (thick oxide layer) (46) is formed on part of the offset zone, and a drain region (48) of N type is formed on part of the offset region. A polycrystalline silicon gate electrode (50) is formed on a gate insulating layer (49) over a section of the trench region, and a source electrode (51) is connected to the source region, and a drain electrode (52) with the drain region.