Reflection type mask and manufacture of microdevices using the same

摘要

A reflection type mask for X-ray lithography based on a phase shift method. A multilayered film of the mask is locally irradiated with an energy beam to provide a phase shifter, on the basis of a change in film thickness period resulting from a temperature rise. By heating the multilayered film to 100 deg. ( DEG C.) or a few hundred deg. ( DEG C.), a film thickness period change of a few percentages occurs without substantially changing the reflectivity. Thus, by selecting the heating condition suitably, a desired phase shifter for changing the phase of reflected light by pi can be provided.