| 摘要 |
PURPOSE: To prevent the deterioration of a hot-carrier resistance which is caused by the moisture present in an interlayer insulation film, in the semiconductor device having a MOS-type transistor. CONSTITUTION: After a MOS-type transistor having a gate electrode G1 is formed on the surface of a semiconductor substrate 10, a wiring layer 16 of a first layer is formed via an interlayer insulation film 14. The wiring layer 16 is configured in such form that the electrode layer G1 is covered with it. Then, an interlayer insulation film 18 is so formed that the wiring layer 16 is covered with it, and thereon, a wiring layer 26 of a second layer is formed. The insulation film 18 is formed while a silicon oxide film 20 formed by a plasma CVD method using tetraethoxyl-silane, a spin-on-glass (SOG) film 22 and a similar silicon oxide film 24 to the film 20 are laminated in succession. By the wiring layer part 16 which covers the electrode layer G1, moisture is prevented from diffusing from the insulation film 18 to the electrode layer G1. As the film for preventing the diffusion of moisture, a different wiring material layer from the wiring layer 16 is used allowably. |
