发明名称 |
Method and apparatus for process endpoint prediction based on actual thickness measurements |
摘要 |
In accordance with one aspect of the present invention, a method is provided for predicting the endpoint time of a semiconductor process for a layer of a wafer (14). The endpoint time is the time at which a predetermined thickness of the layer occurs. A layer thickness, calculated for a first sample time, is received. It is then determined whether or not the layer thickness lies within a predetermined range. If the layer thickness does lie within the predetermined range, it is used to update a forecasted process rate. The forecasted process rate is used to predict the endpoint time. The endpoint time is used to control the semiconductor process so that the layer of wafer (14) is formed having the predetermined thickness.
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申请公布号 |
US5503707(A) |
申请公布日期 |
1996.04.02 |
申请号 |
US19930125954 |
申请日期 |
1993.09.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MAUNG, SONNY;BUTLER, STEPHANIE W.;HENCK, STEVEN A. |
分类号 |
C23C14/54;G01B11/06;(IPC1-7):H01L21/306 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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