| 摘要 |
PURPOSE: To provide a crystal growth method of compound semiconductor which is two-dimensionally controlled at a low temperature without using toxic metal hydride represented by arsine. CONSTITUTION: On the surface of a P-type GaAs (111) B substrate 11, a mesa trench is formed in the [21 bar 1 bar] A direction, and TDMAAs as group V material at 8×10<-3> Pa and TMGa as group III material at 8×10<-4> Pa are supplied, thereby predominantly growing N-type GaAs 13 on the side surface of the mesa 12. The group V material is changed to metal As, and As4 at 5×10<-3> Pa and MAGa at 8×10<-4> Pa are supplied, thereby growing P-type GaAs 14 on only the side surface of GaAs 13. The group V material is again changed to TDMAAs, and TDMAAs at 8×10<-4> Pa and TMGa at 8×10<-4> Pa are supplied, thereby growing P-type GsAs 15. Hence the conductivity type can be controlled by controlling the pressure ratio of TDMAAs and TMGa. |
