| 摘要 |
According to a method of repairing a pattern using a photomask pattern repair device of the present invention, a reference point is set within a reference point confirmation scanning area on a pattern member and near a pattern repair range on the pattern member, and a protection film is formed by a material other than that of an underlying member, so as to cover the reference point confirmation scanning area. A through hole is then formed so as to penetrate only the protection film. The scanning area is scanned with a charged particle beam to cause a secondary ion to be emitted from the underlying member only through the through hole. The secondary ion is detected to confirm a reference position corresponding to the through hole. When a variation in the orbit of the charged particle beam is detected from the confirmed reference position, the position of the charged particle beam is corrected in accordance with an amount of drift of the variation. |
