| 摘要 |
<p>PURPOSE: To provide a field emission cold cathode device with low field emission voltage further with high efficiency, and to provide a method of manufacturing this field emission cold cathode device by improving uniformity, reproducibility and productivity further in a short time. CONSTITUTION: An inverted pyramidal hole 12, having a flat or curved bottom part in the bottom, is provided in an Si singlecrystal substrate 11. Next, the substrate 11 is thermally oxidized, and an SiO2 insulating layer 13, having thickness about 1.5 times a width of the bottom part, is formed inside/outside the hole 2. Then, an emitter material layer 14 is formed on the insulating layer 13 so as to bury the hole 12. Next in a side of the emitter material layer 14, after a glass substrate 17 is connected, the Si substrate 11 is removed by etching, to expose the insulating layer 13. On the insulating layer 13, after a gate electrode layer 19 is formed, so as to expose a point end of a protrusive part 18 of the emitter material layer 14, an emitter 44 is formed by removing partly the insulating layer 13 and the gate electrode layer 19.</p> |
