| 摘要 |
<p>PURPOSE: To obtain a method for producing an active matrix display with less masking stages, in high yield and with high productivity. CONSTITUTION: A gate electrode 13 and a gating electrode 15 are formed on an insulating substrate 11. An insulating film 16, semiconductor thin films 17 and 18 and a metallic film 19 are then successively formed over the entire surface, and the metallic film 19 is patterned with a first resist pattern 20 as a mask. The semiconductor thin films 17 and 18 and the insulating film 16 are patterned with one out of the first resist pattern 20 and the patterned metallic film 19 as a mask to expose the gating electrode 15, and then a transparent conductive film is formed over the whole surface. The transparent conductive film is patterned with a second resist pattern as a mask to form a picture element electrode, and then the exposed part of the metallic film pattern is removed with either the second resist pattern or the picture element electrode as a mask.</p> |
