| 摘要 |
PURPOSE: To obtain a semiconductor storage device, in which a trench capacitor is used as a memory cell capable of preventing the alignment displacement of an element isolation insulating film and a trench even when the fining of the memory cell progresses. CONSTITUTION: A memory cell array, in which memory cells consisting of MOS transistors as switching elements formed to a p-type silicon substrate 1, trench capacitors, in which trench-capacitor storage electrodes 6 are buried into trenches 4 formed to the surface of the p-type silicon substrate 1 through capacitor insulating films 5, and conductive pads 10 connecting the n-type diffusion layers 9 of the MOS transistors and the trench-capacitor storage electrodes 6 are arrayed and formed, is provided. Element-isolation Insulating films 42 surrounding the peripheries of the trench grooves 4 and mutually isolating the regions of each MOS transistor are shaped. |
