| 摘要 |
PURPOSE: To provide a light emitting diode which makes possible improvement of luminous efficacy in a light emitting portion made of InGaAlP and improvement of luminance. CONSTITUTION: A light emitting diode has an n-GaAs substrate 11, an n-InGaAlP clad layer 12 formed on the substrate 11, a multilayer light emitting layer 13 formed on the clad layer 12, and a p-InGaAlP clad layer 15 formed on the multilayer light emitting layer 13, for leading out a light from the plane opposite to the substrate 11. In this light emitting diode, the multilayer light emitting layer 13 is caused to have a multiple quantum well structure in which a strain quantum well layer 13a having a tensile strain and a strain relaxation barrier layer 13b having a compression strain are stacked. |
