发明名称 |
Semiconductor laser having low current threshold |
摘要 |
A semiconductor laser including a substrate, means for reducing the lateral current flow and means forming the active elements, wherein said means for reducing the lateral current flow are composed by at least three layers of which the external ones are entirely doped and the internal layers are doped only in the zones lateral to the active element so that these layers reduce the side current flow.
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申请公布号 |
US5504769(A) |
申请公布日期 |
1996.04.02 |
申请号 |
US19940196289 |
申请日期 |
1994.02.14 |
申请人 |
ALCATEL ITALIA S.P.A. |
发明人 |
PELLEGRINO, SERGIO;DEL GIUDICE, MASSIMO;VIDIMARI, FABIO |
分类号 |
H01L33/00;H01S5/20;H01S5/227;(IPC1-7):H01S3/18 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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