| 摘要 |
PURPOSE: To constitute the cell of a DRAM by utilizing the bonding technique of a wafer without resulting in the increase of contact resistance and the complication of processes by using an Si-poly Si direct contact for the connection of a capacitor electrode and a diffusion layer and employing a perovskite type high dielectric material as a capacitor insulating film. CONSTITUTION: A capacitor having structure, in which a perovskite type high dielectric insulating film 13 is held by ITO films 12, 15, is formed onto a first Si substrate 10. A MOS transistor consisting of source-drain diffusion layers 24, 25 and a gate electrode 23 is formed to a second Si substrate 20. An Si-poly Si direct contact is conducted to the drain diffusion layer 25 of the MOS transistor and the ITO film 15 by directly bonding these substrates 10, 20. Accordingly, no contact process is required, and processes can be simplified while contact resistance can be lowered. |
