| 摘要 |
<p>A method is provided for writing into a semiconductor memory which includes a MOS transistor formed on a semiconductor substrate and an anti-fuse formed of an insulating film and an upper electrode on a drain of the MOS transistor. The method includes the steps of applying a first voltage between the upper electrode of the anti-fuse and a source of the MOS transistor to cause dielectric breakdown of the insulating film of the anti-fuse, with the MOS transistor turned on; and applying a second voltage between the upper electrode of the anti-fuse and the semiconductor substrate so that a larger amount of current flows than the amount of current required for breaking down the insulating film of the anti-fuse.</p> |
