Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie Verfahren zur Herstelung derartiger Halbleiterstrukturen

摘要

A process for producing a semiconductor structure with a highly conductive buried layer with the steps: application of an insulating layer (22) to a first surface of a first semiconductor substrate (23); application of an insulating layer (29) on a surface of a layer (28) of highly conductive material which is physically separate from the first semiconductor substrate; and bonding the two insulation layers.