发明名称 APPARATUS AND METHOD FOR MAGNETRON IN-SITU CLEANING OF PLASMA REACTION CHAMBER
摘要 <p>A method and apparatus for removing extraneous deposits from particle control surfaces in a microwave plasma generating device. An annular magnetron plasma (80) is formed in contact with a particle control surface (25) having a shape which intersects 200-500G lines of magnetic induction. The magnetron plasma is scanned across particle control surfaces on a horn (24) and chuck (27) by increasing the current to the main coil (14) and/or mirror coil (28) of the apparatus. As the magnetron plasma moves across the particle control surfaces, the plasma reacts with the extraneous deposits and etches the deposits off the particle control surfaces.</p>
申请公布号 WO1996009641(A1) 申请公布日期 1996.03.28
申请号 US1995011989 申请日期 1995.09.15
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