Lateral semiconductor and operational arrangement

摘要

The lateral semiconductor consists of a semiconductor compound substrate (6) that is combined with a second semiconductor substrate (7) using an oxide film (8). A channel filled with an isolating material (9) is formed in the first substrate and extends to the oxide film. The formed isolated element zones (10) have diffusion zones created (11,12) that are of different conductor types and are distanced from the isolating channels by a value given by the relationship, LG greater or equal to (LD-d), where LD is the distance between the diffusion zones and d is the thickness of the first substrate (6). d is less than or equal to 10 microns.