| 发明名称 |
Enhanced mobility MOSFET device and method |
| 摘要 |
<p>An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places the channel layer (12) under a tensile stress. <IMAGE></p> |
| 申请公布号 |
EP0703628(A2) |
申请公布日期 |
1996.03.27 |
| 申请号 |
EP19950114228 |
申请日期 |
1995.09.11 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
CANELARIA, JON J. |
| 分类号 |
H01L29/78;H01L21/04;H01L21/336;H01L29/10;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
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