| 摘要 |
In a Group II-VI semiconductor laser based on MgZnSSe, CdZnSSe, or MgCdZnSSe, adsorption layers (12) containing crystal structure elements and doping impurities are successively grown as crystals on an n-type substrate (22), wherein the layers (12) from the initial adsorption layer to the next-to-last p-type adsorption layer are formed using solid-source MBE, and the last p-type adsorption layer (15) is formed using gas-source MBE or MOVPE; and wherein the last p-type adsorption layer (15) is preferably grown under Group II rich conditions. <IMAGE> |
