发明名称 |
A field controlled semiconductor device of SiC and a method for production thereof |
摘要 |
A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the channel region with respect to the base layer. |
申请公布号 |
SE9601179(D0) |
申请公布日期 |
1996.03.27 |
申请号 |
SE19960001179 |
申请日期 |
1996.03.27 |
申请人 |
ABB RESEARCH LTD |
发明人 |
MIETEK *BOKOWSKI;CHRISTOPHER *HARRIS;ULF *GUSTAFSSON;MATS *ANDERSSON |
分类号 |
H01L21/04;H01L29/24;H01L29/739;H01L29/745;H01L29/749;(IPC1-7):H01L/ |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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