| 摘要 |
A light-emitting semiconductor device (100) having an improved metal contact to semiconductor connection that lowers the device drive voltage includes a sapphire substrate (1), an 500 ANGSTROM thick AlN buffer layer (2), a 2.0 mu m thick silicon (Si) doped GaN n<+>-layer (3) of high carrier (n-type) concentration with an electron concentration of 2 x 10<1><8>/cm<3>, a 2.0 mu m thick Si-doped (Alx2Ga1-x2)y2In1-y2N n<+>-layer (4) of high carrier (n-type) concentration with an electron concentration of 2 x 10<1><8>/cm<3>, a 0.5 mu m thick magnesium (Mg), zinc (Zn), and Si-doped (Alx1Ga1-x1)y1In1-y1N emission layer (5), and a 1.0 mu m thick Mg-doped (Alx2Ga1-x2)y2In1-y2N p-layer (61), a 0.2 mu m thick Mg-doped GaN second contact layer (62) with 5 x 10<1><7>/cm<3> hole concentration and 1 x 10<2><0>/cm<3> Mg concentration, and a 500 ANGSTROM thick Mg-doped GaN first contact layer (63) with a hole concentration of 2 x 10<1><7>/cm<3> and with a Mg concentration of 2 x 10<2><0>/cm<3>. Nickel electrodes (7, 8) are connected to the p-layer (61) and the n<+>-layer (4), respectively. <IMAGE> |
