Programable element in barrier metal device and method

摘要

An integrated circuit 10 has a programmable Zener diode with diffusion regions 18 and 16 and metal contacts 34 and 32. A barrier metal 30 is disposed between one contact 32 and the substrate 12; another contact region 44 has no barrier metal on its surface. A polysilicon layer 22 is self-aligned with surface regions 44 and diffusion region 18. A silicide layer 128 may be used on the polysilicon layer 22 and on surface region 44.