| 摘要 |
PURPOSE: To prevent the tailing, the biting in a lithography step by depositing a silicon nitride film on a silicon substrate, and forming a silicon oxide film or a silicon nitride oxide film on the surface of the silicon nitride film. CONSTITUTION: An Si substrate 1 is heated in an (O2 +HCl) atmosphere, and a silicon oxide film 2 is formed on the substrate 1. A silicon nitride film 3 is deposited on the entire surface of the film 2 with (NH4 OH+SiCl2 H2 ) as source gas. An O2 plasma down flow process is executed, and a silicon oxide film or a silicon nitride oxide film 4 is formed on the surface of the film 3. The substrate formed with the film 4 is spin coated with a resist film 6 of chemical amplification type resist, preheated, exposed, developed, and a resist pattern 6a is formed. With the pattern 6a as a mask, the underlying oxide film 4 and the film 3 are selectively etched to form a silicon nitride film pattern 3a. |
