发明名称 Integrated magnetoresistive sensor
摘要 A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si3N4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.
申请公布号 US5502325(A) 申请公布日期 1996.03.26
申请号 US19950453940 申请日期 1995.05.30
申请人 HUGHES AIRCRAFT COMPANY 发明人 SOKOLICH, MARKO;YAMASAKI, HIROYUKI;YANG, HUAI-TUNG
分类号 G01R33/09;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L29/82;H01L43/00 主分类号 G01R33/09
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