发明名称 |
Integrated magnetoresistive sensor |
摘要 |
A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si3N4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.
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申请公布号 |
US5502325(A) |
申请公布日期 |
1996.03.26 |
申请号 |
US19950453940 |
申请日期 |
1995.05.30 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
SOKOLICH, MARKO;YAMASAKI, HIROYUKI;YANG, HUAI-TUNG |
分类号 |
G01R33/09;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L29/82;H01L43/00 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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