| 摘要 |
<p>PURPOSE: To improve productivity by suppressing the degradation in the characteristics as a liquid crystal panel occurring in an increase in resistance value near TFTs. CONSTITUTION: This process for production of the liquid crystal panel has a stage for forming gate electrode wires on a substrate, a stage for forming gate insulating films on these gate electrode wires, a stage for forming operating semiconductor layers on the gate insulating films and a stage for forming channel protective films 114 in the regions corresponding to the gate electrodes on the operating semiconductor layers. The process also includes a stage for forming source electrodes 117-1 and drain electrodes 117-2 on the operating semiconductor layers, a stage for forming silicide films 118 between the source electrodes and drain electrodes and the operating semiconductor layers, a stage for patterning and forming insulating films 121 covering the source electrodes and the drain electrodes and a stage for forming the films of transparent electrodes 119 connected to the source electrodes via openings 121-1 disposed in the insulating films. An annealing treating for stabilizing characteristics is thereafter executed.</p> |
