发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To decrease the impedance of a metal wire with a simple process and to reduce cost by providing a metal spherical body with the metal wire which is bonded onto a metal rib and is extended from an upper part and at the same time bonding the metal wire to an electrode pad. CONSTITUTION: A metal spherical body 14 is bonded to a metal rib 16 and at the same time a gold wire 14a extended from the upper portion of the metal spherical body 14 is bonded to source electrode pads 18a and 18b. The height dimension of the metal spherical body 14 is formed to be as thick as a semiconductor device 15. In terms of the manufacturing method, first the metal spherical body 14 is formed, the metal spherical body 14 is pressed against the metal rib 16 by a capillary 31, and then a first bonding is performed. After that, the capillary 31 is pulled up and the gold wire 14a is extended from the upper portion of the metal spherical body 14. Then, the gold wire 14a is cut at the position of the source electrode pad 18b of the semiconductor device 15 and the gold wire 14a is pressed against the source electrode pad 18b for performing second bonding.
申请公布号 JPH0883816(A) 申请公布日期 1996.03.26
申请号 JP19940216136 申请日期 1994.09.09
申请人 MITSUBISHI MATERIALS CORP 发明人 YADOKORO HIROAKI;NOSE TSUNETARO
分类号 H01L21/60;H01L21/822;H01L27/04 主分类号 H01L21/60
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