| 摘要 |
PURPOSE: To obtain a semiconductor element having a structure, wherein one part of a conductive wiring is formed into a single layer of a first conductive wiring and the other part of the conductive wiring is formed into two layers of the first conductive wiring and a second conductive wiring by a method, wherein the second conductive wiring is formed in an etching process using a second conductive wiring mask and the first conductive wiring is formed using an exposed etching barrier layer pattern as a mask. CONSTITUTION: A first conductive layer is formed on an insulating film 1, and an etching barrier layer is formed thereon. Then, the barrier layer is removed to form an etching barrier layer pattern 3', and thereafter a second conductive layer is formed on the entire surface of the structure of a semiconductor element. Then, a second photosensitive film pattern is formed in such a way as to overlap the pattern 3'. Then, the second conductive layer exposed through the second photosensitive film pattern is etched to form a second conductive wiring 5', and subsequently the exposed first conductive layer is etched using the second photosensitive film pattern and the pattern 3' as masks. Thereby, the element is formed into a structure, wherein one part of a wiring is formed into a single layer of a first conductive wiring 2', and the other part of the wiring is formed into two layers by the wiring 5' and the laminated first conductive wiring 2'. |
