发明名称 |
Positive-working quinonediazide photoresist composition containing a cyclohexyl-substituted triphenylmethane compound |
摘要 |
An improved positive-working photoresist composition useful in the fine patterning work of a resist layer is proposed which is capable of giving a patterned resist layer having excellent resolution, heat resistance and orthogonality of the cross sectional profile of a line pattern with a high sensitivity to actinic rays and a wide range of the focusing depth. The photoresist composition comprises, as a uniform mixture in the form of a solution, (a) an alkali-soluble novolac resin, (b) a naphthoquinone-1,2-diazido group-containing compound as a photosensitizing ingredient and (c) a specific phenolic triphenyl methane compound substituted by cyclohexyl groups on two of the phenyl groups, such as bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenyl methane or bis(3-cyclohexyl-6-hydroxy-4-methylphenyl)-3,4-dihydroxyphenyl methane, in a specified amount.
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申请公布号 |
US5501936(A) |
申请公布日期 |
1996.03.26 |
申请号 |
US19940362857 |
申请日期 |
1994.12.23 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HOSODA, HIROSHI;NUMATA, REMI;DOI, KOUSUKE;TOKUTAKE, NOBUO;KOHARA, HIDEKATSU;NAKAYAMA, TOSHIMASA |
分类号 |
G03F7/004;G03F7/022;G03F7/039;H01L21/027;(IPC1-7):G03F7/023 |
主分类号 |
G03F7/004 |
代理机构 |
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地址 |
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