发明名称 |
Method for fabricating gate oxide layers of different thicknesses |
摘要 |
A method for fabricating gate oxide layers of different thicknesses on a silicon substrate. A field oxide layer is formed on a predetermined portion of the silicon substrate to define first active regions and second active regions. A first gate oxide layer is formed over the first and second active regions. A barrier layer is formed to cover a portion of the first gate oxide layer within the first active regions. The portion of the first gate oxide layer within the second active regions is then removed utilizing the barrier layer as masking. A second gate oxide layer is then formed over the second active regions.
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申请公布号 |
US5502009(A) |
申请公布日期 |
1996.03.26 |
申请号 |
US19950389247 |
申请日期 |
1995.02.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN, JENGPING |
分类号 |
H01L21/8234;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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