发明名称 FORMATION OF INTEGRATED CIRCUIT CHIP,INTEGRATED CIRCUIT CHIP,ELECTRONIC MODULE AND FORMATION OF ELECTRONIC MODULE
摘要 PROBLEM TO BE SOLVED: To provide a technique of selectively removing a material, which is used at the time of forming an electronic module, constituted of a 'stack' of a plurality of chips, from a cut groove region (kerf region) related to the semiconductor chips. SOLUTION: This method includes a method of providing a wafer having a plurality of integrated circuit chips having a cut groove region 17 between them. Chip metallized films 15 and 16 exist in the region 17. The wafer is protected using a photolithographic process, and only the region 17 is exposed. Then, the wafer is etched, and the chip metallized films are removed from the region 17. Then the wafer is diced, and the chips are stacked to form a monolithic electronic module. The side surfaces of the module are treated to expose a transfer metallic film which extends to the side surfaces of the module. Thereby, the electrical connection of the transfer metallic film to the chips in the module is facilitated.
申请公布号 JPH0883888(A) 申请公布日期 1996.03.26
申请号 JP19950206881 申请日期 1995.08.14
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 KUROODO RUI BERUTAN;UEIN JIYON HAUERU;KENESU EDOWAADO BAIRUSUTAIN JIYUNIA;TEIMOSHII HARISON DAUBENSUPETSUKU
分类号 H01L25/18;H01L21/02;H01L21/301;H01L21/3205;H01L21/822;H01L21/98;H01L23/52;H01L25/065;H01L25/07;H01L27/00;H01L27/04 主分类号 H01L25/18
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