WIRE FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

depositing an insulating film(52) on a first metal layer(51) formed on a semiconductor substrate; forming a buffer layer(8) thereon; forming a via hole(9) in the defined portion of the insulating film(52) on which the metal wiring is positioned; forming a inclined via hole(60) by forming a second buffer layer(8-1) on the insulating film excepting the bottom of the via hole and etching back it; forming a Ni layer(61) in the via hole; exposing the first metal layer(51) to pass through the bottom of the via hole by etching back the metal layer and anisotropic dry etching the insulating film(52) to use the buffer layer as a mask; remaining the metal layer(61-1) on upper side wall of the via hole; forming a polysilicon plug(63) by etching back a formed polysilicon; depositing a Ni layer(64) over the surface; carrying out the heat treatment of the polysilicon(63) at 700-900 deg.C, and selectively removing the unreactive metal layer(64); and depositing an aluminium alloy layer(66) over the surface.