Method for heat treating a semiconductor substrate to reduce defects

摘要

A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100 DEG C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900 DEG C., 4 minutes), (800 DEG C., 40 minutes), (700 DEG C., 11 hours) and (600 DEG C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.