| 摘要 |
forming a N+ diffusion layer and a P+ diffusion layer on a silicon substrate; depositing an interlayer insulating film over the N+ and P+ diffusion layers, coating a first photoresist film over the insulating film, and forming a first contact hole over the N+ diffusion layer by masking process and etching process; removing the remaining first photoresist film, depositing a first contact layer made of a first metal silicide exhibiting a low potential barrier to the N+ diffusion layer over the first contact hole for the N+ diffusion layer, and forming a pattern of the first contact layer for N+ diffusion layer by mounting process; coating a second photoresist film over the first contact layer and the insulation film, and forming a second contact hole over the P+ diffusion layer by masking process and etching process; removing the remaining second photoresist film; depositing a second contact layer made of a second metal silicide exhibiting a low potential barrier to the P+ diffusion layer and over the first contact hole for the N+ diffusion layer, and forming a pattern of the second contact layer for the P+ diffusion layer and the N+ diffusion layer by mounting process; and sequentially depositing a diffusion barrier metal layer and a metal wiring layer over the first and second contact layers and the insulating film, and forming a metal wiring by masking process.
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