| 摘要 |
PURPOSE: To surely form fine patterns which have an improved adhesion property and good shapes and are free from film peeling by using a pattern forming material of a chemical amplification type. CONSTITUTION: A resist thin film is formed on a semiconductor substrate 1 by using the pattern forming material 2 and spin coating the substrate with this material and is then soft-baked by a hot plate 3 to remove solvent in the thin film by evaporation and a pattern forming material thin film is obtd. (a). Next, the thin film is exposed to a KrF excimer laser 4 via a mask 5 to photodecompose an acid generating agent 2 (b). Tertial butoxy groups are then brought into alkali soluble reaction by baking (PFB) (c). The exposed parts 2b of the pattern forming material 2 are dissolved away by development with an alkaline developer (an aq. sol. of 2.38% tetramethyl ammonium hydroxide) to obtain positive type patterns 2a, 2c. (d). As a result, the fine patterns 2c of <=1.0μm are formed on the substrate 1 without being peeled from the substrate. |
