| 摘要 |
<p>The method for making a metal plug(5) to electrically connect upper and lower wiring layers in a semiconductor device comprises: preparing a semiconductor substrate (1) including a wiring layer and insulating film(2) having a contact hole(3) on the substrate; and forming a poly-Si film(6) overall. A photoresist film is formed at the bottom of the contact hole, and exposed poly-Si removed, followed by removal of the photoresist. A metal film is formed overall and annealed to react with the poly-Si to form a silicide film(4) at the bottom of the contact hole, unreacted metal is removed and the hole is filled with a second metal to form a metal plug(5) in the hole. The metal plug has a uniform surface, a junction consumption reaction is prevented, and the wiring layer has a uniform thickness.</p> |
