发明名称 Method of forming a antifuse structure with increased breakdown at edges
摘要 An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the antifuse layer forms a substantially orthogonal angle with the first conductive layer and the second conductive layer. This "corner" formation of the antifuse enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i.e. the conductive path between the first and second conductive layers. This antifuse provides other advantages including: a relatively low programming voltage, good step coverage for the antifuse layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.
申请公布号 US5502000(A) 申请公布日期 1996.03.26
申请号 US19950436995 申请日期 1995.05.08
申请人 XILINX, INC. 发明人 LOOK, KEVIN T.;WOLSHEIMER, EVERT A.
分类号 H01L21/82;H01L21/768;H01L23/525;H01L27/10;(IPC1-7):H01L21/70;H01L27/00 主分类号 H01L21/82
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