| 摘要 |
The method for forming wiring layers of at least two layers on a wiring(5) formed on a substrate(1), comprises the steps of: (i) forming a first insulation film(2-1') and a first light exposure film(3') which are twice or more of the wiring(5) in thickness, and baking the light exposure film(3'); (ii) forming a pattern of the light exposure film(3'), forming a preliminary contact window(13') by etching about half of the insulation film(2-1'), and removing the light exposure film(3'); (iii) forming a second insulation film(2-1") and a second light exposure film(3"), baking the light exposure film(3'), forming a pattern of the light exposure film(3"), and simultaneously forming the wiring seat(14) and the contact window(16) by reactive ion etching process; (iv) forming other wiring(7) by depositing a metal, and removing the light exposure film(3"); and (v) repeating the steps of (i)-(iv) for two or more times.
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